The first technique discussed to improve the transistor is to strain the silicon by replacing some silicon atoms with germanium atoms. This causes the distance between atoms to increase due to the germanium's larger size. The size change in the lattice changes the energy band structure along with reducing electron and hole collisions and decreasing their effec

When the transistor continues to shrink it's difficult to maintain a strong connection between the channel and gate with the current polysilicon gates. The highly doped polysilicon acts nearly as a metal due to the high concentration of carriers. However, it creates a depletion region of approx 4-5 angstroms, which puts a constraint on how small the transistor can go, based on that type of gate. It's proposed that metal gates will be helpful in removing this depletion region. The alloy ruthenium-tantalum was proposed as a possible gate material since the work function can be changed by switching the mix of the alloy to obtain the desired threshold voltage.

tive masses therefore increasing mobility. When the mobility increases, it allows for carriers to be more quickly accelerated by an electric field. This method isn't currently in production since

Some common words found in the essay are:
IEEE Spectrum, Transistor Act, gate insulation, depletion region, technologies implemented, , reducing size channel, gate leakage, size channel, threshold voltage, reducing size, hafnium dioxide, channel gate, leakage current,
Approximate Word count = 578
Approximate Pages = 2 (250 words per page double spaced)